Description
DATASHEET IRF620 . SiHF620. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. IRL220-223/ IRF620 -623. MTP7N18/7N20. N-Channel Power Mosfets. 7A,150- 200V www.artschip.com. 1. Description. These device are n-channel,
Part Number | IRF620 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Hitachi |
Description | MOSFET N-CH 200V 5.2A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 3.1A, 10V |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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