Description
Jan 16, 2014 Rev IC Capacity IC Date Code Speed/Config Date tested. HMT425U6AFR6C-TE. 2GB. 1Rx16. H5TQ4G63AFR -TEC. A. 4Gb. 1314. 2133/1DPC. The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR -xxC are a 4Gb CMOS Double Data Rate III. (DDR3) Synchronous DRAM, ideally suited for Nov 14, 2014 1Rx16. H5TQ4G63AFR -RDC. A. 4Gb. 1310. 1866/1DPC. 2/21/2014. HMT425S6AFR6C-TE. 2GB. 1Rx16. H5TQ4G63AFR -TEC. A. 4Gb. 1311. H5TQ4G63AFR -x. EDJ4216BFBG. NT5CB256M16CP-FL. EM6GE16EW5B-xxH. 4G. AS4C256M16D3L-12BxN. MT41K256M16RE-15E. K4B4G1646B-BYF. VDD=1.5V +/- 0.075V. VDDQ=1.5V +/- 0.075V. VDDSPD=3.0V to 3.6V. 8 internal banks. Data transfer rates: PC3-14900, PC3-12800, PC3-10600,PC3-
Part Number | H5TQ4G63AFR |
Brand | Hitachi |
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H5TQ4G63AFR
HATACHI
12000
1.71
Cinty Int'l (HK) Industry Co., Limited
H5TQ4G63AFR
Hitachi Semiconductor
11005
2.88
CIS Ltd (CHECK IC SOLUTION LIMITED)
H5TQ4G63AFR
HITAC
12
4.05
Yingxinyuan INT'L (Group) Limited
H5TQ4G63AFR
HITACHI
4520
5.22
TERNARY UNION CO., LIMITED
H5TQ4G63AFR ROC
HIT
13000
6.39
N&S Electronic Co., Limited