Part Number | 8EWS12S |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Hitachi |
Description | DIODE GEN PURP 1.2KV 8A DPAK |
Series | - |
Packaging | Tube |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 50µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-Pak |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
8EWS12S MOS
HATACHI
2027
0.94
Ysx Tech Co., Limited
8EWS12S
Hitachi Semiconductor
1000
1.7375
HK HEQING ELECTRONICS LIMITED
8EWS12S
HITAC
1541
2.535
Cicotex Electronics (HK) Limited
8EWS12S MOS()
HITACHI
9397
3.3325
CIS Ltd (CHECK IC SOLUTION LIMITED)
8EWS12S
HIT
1324
4.13
Redstar Electronic Limited